Investigations on the damage caused by ion etching of SiO2 layers at low energy and high dose |
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Authors: | Hans R. Deppe Barbara Hasler Joachim Höpfner |
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Affiliation: | Siemens AG, Forschungslaboratorien, D-8000 München 70, Hofmannstr. 51, Germany |
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Abstract: | The radiation damage caused by argon ion bombardment during ion etching of thermally grown SiO2 films at an energy below 1 keV and a dose of about 1018 cm?2 has been studied by evaluating MOS C-V curves, FET characteristics, as well as Rutherford ion backscattering spectra. The bombarded samples revealed that ion beam etching in this energy range causes a damaged layer of 5–10 nm thickness at the single crystal silicon surface. Moreover, traces of metal atoms are found in the damaged layer together with argon atoms (≈ 1021cm?3). |
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