Current-voltage characteristics of GaAs p-i-n and n-i-n diodes

Using the same basic equations as Kazarinov et al.[2], but assuming that the product of the electron drift velocity and of the electron lifetime remains constant, we have derived a new formula for the forward d.c. current—voltage characteristic distinguished by the saturated voltage. We have shown that this formula can describe the measured characteristics of some GaAs p-i-n and n-i-n diodes.