Conductivity of complementary error function n-type diffused layers in gallium arsenide |
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| Authors: | B.Jayant Baliga |
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| Affiliation: | General Electric Company, Research and Development Center, Schenectady, N.Y. 12301, U.S.A. |
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| Abstract: | The average conductivity of n-type erfc diffused layers in Gallium Arsenide have been calculated for background doping levels of 1015 cm?3, 1016 cm?3 and 1017 cm?3. The curves are confined to surface concentrations below 1019 cm?3 because of the strong dependence of diffusion coefficient upon concentration at higher concentrations. |
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