High efficiency n-CdS/p-InP solar cells prepared by the close-spaced technique

Heterojunction solar cells have been made by epitaxial growth of CdS on p-type InP using the close-spaced technique. Good rectification and photovoltaic properties have been observed in the cells grown on the (110) face of InP. The characteristics of the most efficient cell are V_oc = 807 mV, the fill factor = 0.74 and the power conversion efficiency = 14.4% under the solar input of 77 mW/cm². The photovoltaic properties of the cells obtained in this experiment are better than those reported elsewhere, and this is attributed to the superiority of the growth system to those of others in points that the junction is formed at relatively high temperature in a short time.