Noise in silicon and FET's at high electric fields

The noise temperature of n-type silicon was measured on an epitaxial layer up to a field strength of 10 KV/cm from 1 to 20 MHz at 77°K. The result was applied to obtain an approximate form for the drain noise of an FET in the high electric field. We found that the noise increases in proportion to the product of the drain current and voltage in high electric fields. The noise of the FET was also measured and the experimental data show reasonable agreement with the theoretical expressions.