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InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching |
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| Authors: | Meng Cao Hui-Zhen Wu Chun-Fang Cao |
| Affiliation: | a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China b National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China |
| Abstract: | The intermixing effect on InAs0.45P0.55/InP strained multiple quantum wells (SMQWs) by inductively coupled plasma (ICP) etching and rapid thermal annealing (RTA) is investigated. Experiments show that the process of ICP etching followed RTA induces the blue shift of low temperature photoluminescence (PL) peaks of QWs. With increasing etching depth, the PL intensities are firstly enhanced and then diminished. This phenomenon is attributed to the variation of surface roughness and microstructure transformation inside the QW structure during ICP processing. |
| Keywords: | A. Nanostructures C. Atomic force microscopy C. X-ray diffraction D. Luminescence D. Optical properties |
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