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共振隧穿器件应用电路概述——共振隧穿器件讲座(2)
引用本文:郭维廉.共振隧穿器件应用电路概述——共振隧穿器件讲座(2)[J].微纳电子技术,2005,42(10):446-454.
作者姓名:郭维廉
作者单位:天津大学电子信息工程学院,天津,300072;专用集成电路国家级重点实验室,石家庄,050051
摘    要:在“共振隧穿器件概述”的基础上,对共振隧穿器件应用电路作了全面概括的介绍。首先对共振隧穿器件应用电路的特点、分类和发展趋势作了简述;进一步对由RTDH/EMT构成的单-双稳转换逻辑单元(MOBILE)和以它为基础构成的RTD应用电路,包括柔性逻辑、静态随机存储(SRAM)、神经元、静态分频器等电路的结构、工作原理和逻辑功能等进行了介绍。关于RTD/HEMT构成的更为复杂的电路,如多值逻辑、AD转换器以及RTD光电集成电路等将在本讲座最后部分进行讲解。

关 键 词:RTD应用电路  单-双稳转换逻辑单元  神经元  静态随机存储  分频器
文章编号:1671-4776(2005)10-0446-09
修稿时间:2005年5月20日

Introduction of Resonant Tunneling Device Applied Circuits: Lecture of Resonant Tunneling Devices (2)
GUO Wei-lian.Introduction of Resonant Tunneling Device Applied Circuits: Lecture of Resonant Tunneling Devices (2)[J].Micronanoelectronic Technology,2005,42(10):446-454.
Authors:GUO Wei-lian
Abstract:On the basis of"Introduction of Resonant Tunneling Devices",the resonant tunneling devices applied circuits were described.Firstly,the features,classification and development trend on resonant tunneling devices applied circuits were described.Then the RTD/HEMT monostable-bistable transition logic element(MOBILE)and the RTD applied circuits composed by MOBILE,such as flexible logic gate,SRAM,neural cellular,static frequency divider circuits,including circuit configuration,operating principle and logic function,etc.were introduced.The more complex circuits on resonant tunneling devices application,such as MVL,ADC,and RTD-based optoelectronic integrated circuits will be given in the last part of this lecture.
Keywords:RTD applied circuits  MOBILE  neural cellular  SRAM  frequency divider
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