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Study of Pb-based and Pb-free perovskite solar cells using Cu-doped Ni1-xO thin films as hole transport material
Affiliation:1. School of Mechanical, Medical and Process Engineering, Faculty of Engineering, Queensland University of Technology, Brisbane, 4000, QLD, Australia;2. Centre for Materials Science, Faculty of Science, Queensland University of Technology, Brisbane, 4000, QLD, Australia;3. School of Chemistry and Physics, Faculty of Science, Queensland University of Technology, Brisbane, 4000, QLD, Australia
Abstract:SCAPS solar cell simulation program was applied to model an inverted structure of perovskite solar cells using Cu-doped Ni1-xO thin films as hole transport layer. The Cu-doped Ni1-xO film were made by co-sputtering deposition under different deposition conditions. By increasing the amount of the Cu-dopant, the film crystallinity enhanced whereas the bandgap energy decreased. The transmittance of the thin films decreased significantly by increasing the sputtering power of copper. High quality, uniform, compact, and pin-hole free films with low surface roughness were achieved. The structural, chemical, surface morphology, optical, electrical, and electronic properties of the Cu doped Ni1-xO films were used as input parameters in the simulation of Pb-based (MAPbI3-xClx) and Pb-free (MAGeI3) perovskite solar cells. Simulation results showed that the performance of both Pb-based and Pb-free perovskite solar cell devices significantly enhanced with Cu-doped Ni1-xO film. The highest power conversion efficiency (PCE) for the Pb-free perovskite solar cell is 8.9% which is lower than the highest PCE of 17.5% for the Pb-based perovskite solar cell.
Keywords:A thin films  D perovskite solar cell  Hole transport material  Cu-doped Ni1-xO  SCAPS simulation
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