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On the Role of Structural Imperfections of Graphene in Resonant Tunneling through Localized States in the h-BN Barrier of van-der-Waals Heterostructures |
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| Authors: | Grigoriev M. V. Ghazaryan D. A. Vdovin E. E. Khanin Yu. N. Morozov S. V. Novoselov K. S. |
| Affiliation: | 1.Institute of Problems of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow Region, Russia ;2.School of Physics and Astronomy, University of Manchester, M13 9PL, Manchester, United Kingdom ;3.Department of Physics, National Research University Higher School of Economics, 105066, Moscow, Russia ;4.Department of Material Science and Engineering, National University of Singapore, 117575, Singapore, Republic of Singapore ; |
| Abstract: | Semiconductors - Resonant tunneling through defect levels in the h-BN barrier of van-der-Waals heterostructures is investigated. The effect of multiplication of the tunneling resonances through... |
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