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On the Formation of Amorphous Ge Nanoclusters and Ge Nanocrystals in GeSixOy Films on Quartz Substrates by Furnace and Pulsed Laser Annealing |
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| Authors: | Zhang Fan Kochubey S. A. Stoffel M. Rinnert H. Vergnat M. Volodin V. A. |
| Affiliation: | 1.Novosibirsk State University, 630090, Novosibirsk, Russia ;2.Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia ;3.Universitè de Lorraine, Institut Jean Lamour UMR CNRS 7198, B.P. 70239, 54506, Vandœuvre-lés-Nancy Cedex, France ; |
| Abstract: | Semiconductors - Nonstoichiometric GeO0.5[SiO2]0.5 and GeO0.5[SiO]0.5 germanosilicate glassy films are produced by the high-vacuum coevaporation of GeO2 and either SiO or SiO2 powders with... |
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