Effect of HfO2 framework on steam oxidation behavior of HfO2 doped Si coating at high temperatures

HfO₂ doped Si is designed as bond coat material in thermal/environmental barrier coatings (TEBCs). In this work, the HfO₂-Si composite coatings with different HfO₂ contents were prepared by atmospheric plasma spraying (APS). The steam oxidation behavior of the coatings was comparatively studied at 1300 °C and 1400 °C. Volatilization of Si occurred during spraying, leading to the deviation of coating compositions. The sprayed coatings contained different HfO₂ structures. During steam oxidation, HfSiO₄ phase was formed at the SiO₂/HfO₂ interface by solid-state reaction between them. The HfSiO₄ or HfO₂/HfSiO₄ mixture particles worked to deflect or pin micro-cracks, thus improving the resistance of the coating to cracking. At 1300 °C, a protective oxide scale was formed on the traditional Si coating or the HfO₂-Si coating with isolated HfO₂ particles. However, the HfO₂-Si coating with inter-connected HfO₂ framework revealed poor oxidation-resistance. At 1400 °C, accelerated oxidation degradation, steam corrosion volatilization, interface reaction and sintering occurred. The HfO₂ framework structure played a dominating role in determining the steam oxidation resistance of the HfO₂-Si coating, and the connected HfO₂ framework and TGO network provided a rapid diffusion path for oxidants (H₂O, O^2? and OH^?) and deteriorated the oxidation resistance.