Enhancing the ultraviolet photosensing properties of nickel oxide thin films by Zn–La co-doping |
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| Affiliation: | 1. Department of Physics, Ananda College, Devakottai, 630303, India;2. PG and Research Department of Physics, Arul Anandar College, Karumathur, 625 514, India;3. Advanced Thin Film Heterostructure and Spintronic Lab, Center for Condensed Matter Sciences, National Taiwan University, Taipei, 10617, Taiwan;4. Department of Physics, School of Physical Sciences, Central University of Rajasthan, Ajmer, 305817, India;5. Department of Physics, Pondicherry University, Puducherry, 605014, India;6. Advanced Functional Materials and Optoelectronic Laboratory (AFMOL), Department of Physics, College of Science, King Khalid University, Abha, 61413, Saudi Arabia;7. Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha 61413, P.O. Box 9004, Saudi Arabia;8. Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Metallurgical Lab.1, Physics Department, Faculty of Education, Ain Shams University, Roxy, 11757, Cairo, Egypt |
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| Abstract: | In this work, co-doping effects of transition (Zn) and rare-earth (La) elements on the crystalline structure, surface morphology, photoluminescence, optical and photosensing properties of NiO thin films are studied. NiO, NiO:Zn(1%), NiO:La(1%), and NiO:Zn(1%):La(1%) thin films are fabricated using the nebulizer spray pyrolysis (NSP) method. X-ray diffraction study revealed the cubic NiO structure of all the films. Photoluminescence (PL) spectra of thin films exhibit various emission peaks centered at the wavelengths of 387, 414, 437, 451, 477, and 521 nm. The optical bandgap energy (Eg) values are found to be 3.46, 3.43, 3.39 and 3.33 eV for NiO, NiO:Zn(1%), NiO:La(1%) and NiO:Zn(1%):La(1%) thin films, respectively. The fabricated (Zn, La) co-doped NiO i.e., NiO:Zn(1%):La(1%) photo-detector exhibits highest responsivity (R), external quantum efficiency (EQE) and detectivity (D*) values of 0.50AW-1, 169% and 14.5 × 109 Jones, respectively as compared to NiO, NiO:Zn(1%) and NiO:La(1%) photo-detectors. The present study revealed that the transition and rare-earth elements co-doping can be an effective approach for tuning the various physical properties of semiconducting oxide films. |
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| Keywords: | La co-doping of NiO:Zn thin films Photoconductivity Cubic NiO structure Various emission peaks Highest responsivity |
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