Effect of holding time on SiC whiskers growth of SiCw/SiC composites based on SLS technology and their mechanical properties |
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| Affiliation: | 1. School of Materials Science & Chemical Engineering, Harbin University of Science & Technology, Harbin, 150080, PR China;2. School of Architectural Engineering, Harbin University of Science & Technology, Harbin, 150080, PR China;3. Department of Civil and Environmental Engineering, College of Engineering, Shantou University, Shantou, 515063, PR China |
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| Abstract: | The in-situ SiC whisker and SiC particle composites were prepared by selective laser sintering (SLS) technology, and the longitudinal and transverse growth rates of crystal nuclei at the liquid-solid interface were calculated and analyzed under the traditional vapor-liquid-solid mechanism. A mathematical model of holding time on the number of in-Situ SiC whisker growth was established, and the prediction rate was 95%. The mechanical properties of in-situ SiC whisker and pure SiC samples with similar volume densities were calculated. The results showed that: The longitudinal growth rate of crystal nuclei at the liquid-solid interface was higher than the transverse growth rate. After precursor infiltration pyrolysis (PIP) four-cycle treatment, the fracture toughness per unit volume density of B-1, B-2, and B-3 specimens increased by 198.66%, 225.00%, and 221.05%, respectively, compared with pure SiC specimens, indicating that this method has a vital role in increasing the toughness of SiC ceramics. |
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| Keywords: | SLS In-situ SiC whiskers Mathematical model Mechanical properties |
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