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| 外吸除用硅片背面加工技术的研究 | |
| 引用本文： | 闵靖,邹子英,李积和,周子美,陈青松,陈一.外吸除用硅片背面加工技术的研究[J].稀有金属,2001,25(5):340-344. |
| 作者姓名： | 闵靖 邹子英 李积和 周子美 陈青松 陈一 |
| 作者单位： | 1. 上海市计量测试技术研究院, 2. 上海硅材料厂, 3. 复旦大学材料研究院, |
| 摘 要： | 用SEM、TEM和光学显微镜研究了硅片背面的机械损伤（包括软损伤）和多晶硅的晶格结构，以及热处理过程中晶格结构和缺陷的演化，探索了吸杂的机理。实验结果表明，用本技术能减少S坑密度，提高硅片生产寿命，对金、铜等金属杂质有吸杂的效果。 |
| 关 键 词： | 机械损伤 软损伤 氧化诱生层错 S坑缺陷 外吸除 内吸除 硅片 |
| 文章编号： | 0258-7076(2001)05-0340-05 |
| 修稿时间： | 2000年8月3日 |
Study on Processing Technique of Silicon Wafer Back Surface of for External Gettering |
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| Min Jing ,Zou Ziying ,Li Jihe ,Zhou Zimei ,Chen Qingsong and Chen Yi.Study on Processing Technique of Silicon Wafer Back Surface of for External Gettering[J].Chinese Journal of Rare Metals,2001,25(5):340-344. | |
| Authors: | Min Jing Zou Ziying Li Jihe Zhou Zimei Chen Qingsong and Chen Yi |
| Affiliation: | Min Jing 1,Zou Ziying 1,Li Jihe 2,Zhou Zimei 2,Chen Qingsong 2 and Chen Yi 3 |
| Abstract: | The crystalline structure of polysilicon and the mechanical damage(including soft damage) on the back of Si wafers as well as induced defects during the thermal treatment of devices were investigated by means of SEM, TEM and optical microscope. A mechanism to explain the gettering was proposed. The effectiveness of reducing s pits density and raising generate lifetime of Si wafers as well as gettering heavy metals impurities such as Au,Cu was demonstrated. |
| Keywords: | Mechanical damage Soft damage Oxidation induced stacking fualt S pit defect External gettering Intenral gettering |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |