Low threshold GaInAsP/InP lasers with good temperature dependence grown by low pressure MOVPE |
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| Authors: | Hirtz J.P. Razeghi M. Larivain J.P. Hersee S. Duchemin J.P. |
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| Affiliation: | Thomson-CSF, LCR, Orsay, France; |
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| Abstract: | Room temperature pulsed operation has been achieved in the 1.2?1.3 ?m region for GaInAsP/InP lasers grown by low pressure metalorganic vapour phase epitaxy. Thresholds as low as 1.2 kA/cm2 and threshold temperature dependences of exp T/T0, with T0 up to 80 K, have been obtained. |
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