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Photoluminescence of InSb quantum dots in GaAs and GaSb matrices |
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| Authors: | A. F. Tsatsul’nikov N. N. Ledentsov M. V. Maksimov B. Ya. Mel’tser P. V. Neklyudov S. V. Shaposhnikov B. V. Volovik I. L. Krestnikov A. V. Sakharov N. A. Bert P. S. Kop’ev Zh. I. Alferov D. Bimberg |
| Affiliation: | 1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia 2. Institute für Festk?rperphysik, Technische Universit?t Berlin, D-10623, Berlin, Germany |
| Abstract: | The photoluminescent properties of quantum dots formed in the deposition of an InSb thin film (1–3 monolayers) on GaAs(100) and GaSb(100) surface are investigated. The results indicate the importance of As-Sb substitution reactions in the formation of quantum dots on a GaAs surface. Fiz. Tekh. Poluprovodn. 31, 68–71 (January 1997) |
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