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Some studies on successive ionic layer adsorption and reaction (SILAR) grown indium sulphide thin films |
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| Authors: | H.M. Pathan S.S. Kulkarni T. Seth |
| Affiliation: | a Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, India b Centre for Materials for Electronic Technology (C-MET), Off Pashan Road, Panchavati, Pune 411 008, India c Inorganic Nano-Materials, Department of Chemistry, Hanyang University, Sungdong-Ku, Haengdang-dong 17, Seoul 133-791, Republic of Korea |
| Abstract: | Indium sulphide (In2S3) thin films were grown on amorphous glass substrate by the successive ionic layer adsorption and reaction (SILAR) method. X-ray diffraction, optical absorption, scanning electron microscopy (SEM) and Rutherford back scattering (RBS) were applied to study the structural, optical, surface morphological and compositional properties of the indium sulphide thin films. Utilization of triethanolamine and hydrazine hydrate complexed indium sulphate and sodium sulphide as precursors resulted in nanocrystalline In2S3 thin film. The optical band gap was found to be 2.7 eV. The film appeared to be smooth and homogeneous from SEM study. |
| Keywords: | A. Chalcogenides B. Thin films C. X-ray diffraction D. Optical properties |
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