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Characterization of ZnO-In2O3 transparent conducting films by pulsed laser deposition |
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| Authors: | Michio Mikawa Toshihiro Moriga Yukinori Misaki Ichiro Nakabayashi |
| Affiliation: | a Department of Telecommunications, Takuma National College of Technology, 551 Kouda, Takuma, Mitoyo, Kagawa 769-1192, Japan b Department of Chemical Science and Technology, Faculty of Engineering, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan c Department of Electronics, Takuma National College of Technology, 551 Kouda, Takuma, Mitoyo, Kagawa 769-1192, Japan d Department of Electric and Electronic Engineering, Faculty of Engineering, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan |
| Abstract: | Transparent conducting oxide (TCO) films in the ZnO-In2O3 system were prepared by a pulsed laser deposition method. A target that consists of the mixture of ZnO and In2O3 powders was used. Influences of the target composition x (x = Zn]/(Zn] + In])) and heater temperature on structural, electrical and optical properties of the TCO films were examined. Introduction of oxygen gas into the chamber during the deposition was necessary for improvement in the transparency of the deposited films. The amorphous phase was observed for a wide range of x = 0.20-0.60 at 110 °C. Minimum resistivity was 2.65 × 10−4 Ω cm at x = 0.20. The films that showed the minimum resistivity had an amorphous structure and the composition shifted toward larger x, as the substrate temperature increased. The films were enriched in indium compared to the target composition and the cationic In/Zn ratio increased as the substrate temperature was increased. |
| Keywords: | A Thin films B Laser deposition C X-ray diffraction D Electrical properties |
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