Influence of the substrate temperature and annealing on the 1.54-µm erbium photoluminescence of a-Si:H films obtained using a glow discharge |
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| Authors: | E. I. Terukov O. I. Kon’kov V. Kh. Kudoyarova O. B. Gusev G. Weiser H. Kuehne |
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| Affiliation: | 1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
2. Philipps Universit?t-Marburg, D-35032, Marburg, Germany
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| Abstract: | Effective Er photoluminescence is observed at room temperature in a-Si:H films doped with Er atoms through a gas phase using powdered Er(TMND)3 as a source of Er ions. It is shown that the conditions for deposition of the films and their subsequent annealing influence the photoluminescence intensity and its temperature dependence. The observed behavior is attributed to restructuring of the amorphous silicon matrix within an Auger excitation mechanism involving defects. Fiz. Tekh. Poluprovodn. 33, 208–210 (February 1999) |
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