InP and Si metal-oxide semiconductor structures fabricated using oxygen plasma assisted wafer bonding |
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| Authors: | Markus Forsberg Donato Pasquariello Martin Camacho David Bergman |
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| Affiliation: | 1.The ?ngstr?m Laboratory,Uppsala University,Uppsala,Sweden;2.Department of Electrical and Computer Engineering,University of California,Santa Barbara,USA;3.Micronic Laser Systems,T?by,Sweden |
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| Abstract: | In this paper, InP metal-oxide-semiconductor (MOS) structures are fabricated by transferring thermally grown SiO2 to InP from oxidized Si wafers using oxygen plasma assisted wafer bonding followed by annealing at either 125°C or at 400°C.
Well-defined accumulation and inversion regions in recorded capacitance-voltage (C-V) curves were obtained. The long-term
stability was comparable to what has been previously reported. The structures exhibited high breakdown fields, equivalent
to thermally grown SiO2-Si MOS structures. The transferring process was also used to fabricate bonded Si MOS structures. |
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| Keywords: | C-V measurement InP Si MOS oxygen plasma wafer bonding |
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