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Fast prototyping of high-aspect ratio, high-resolution X-ray masks by gas-assisted focused ion beam
Authors:C Khan Malek  F T Hartley  J Neogi
Affiliation:(1) Laboratoire de Spectroscopie Atomique et Ionique (LSAI), CNRS-UMR8624, Bat. 350, France;(2) Laboratoire de l'Utilisation du Rayonnement Electromagnétique (LURE), Bat. 290, D Université Paris-Sud, 91405, Orsay Cédex, France;(3) Center for Advanced Microstructures and Devices (CAMD), Louisiana State University, 3990 West Lakeshore Drive, Baton Rouge, LA 70806, USA;(4) Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109, USA;(5) Norsam Technology, 5285 Northeast Elam Young Parkway, Suite B800 Hillboro, OR 97124, USA
Abstract:The capacity of chemically-assisted focused ion beam (FIB) etching systems to undertake direct and highly anisotropic erosion of thin and thick gold (or other high atomic number {Z}) coatings on X-ray mask membranes/substrates provides new levels of precision, flexibility, simplification and rapidity in the manufacture of mask absorber patterns, allowing for fast prototyping of high-aspect ratio, high-resolution masks for deep X-ray lithography for the LIGA process. In preliminary demonstrations, an automated FIB system operating at 30 keV with a gallium liquid metal source and an iodine gas injection system was used for direct milling into a few micrometer thick gold of microstructures into the sub-hundred nanometer regime. Three-dimensional micromachining in bulk diamond is also reported to illustrate the capability of the technique.This work was made possible under funding for California Institute of Technology from NASA general contract (# NAS7-1407), the partial funding for CAMD from the DARPA grant ldquoHI-MEMS Development and Manufacturingrdquo (contract # N66001-98-1-8926). Patrick Deshaye (Norsam) microsculpting work is also gratefully acknowledged.This paper was presented at the Fourth International Workshop on High Aspect Ratio Microstructure Technology HARMST 2001 in June 2001.
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