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A Novel Technique to Investigate the Impact of Temperature and Process Parameters on Electrostatic and Analog/RF Performance of Channel Modulated Junctionless Gate-all-around (CM-JL-GAA) MOSFET |
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| Authors: | Gupta Abhinav Gupta Vidyadhar Pandey Amit Kumar Gupta Tarun Kumar |
| Affiliation: | 1.Department of Electronics Engineering, Rajkiya Engineering College, Sonbhadra, Uttar Pradesh, 231206, India ;2.Department of Electronics and Communication Engineering, P.S.I.T. Kanpur, Dr. A P J Abdul Kalam Technical University, Lucknow, Uttar Pradesh, 226031, India ;3.Department of Applied Science and Humanities, Rajkiya Engineering College, Ambedkar Nagar, Uttar Pradesh, 224122, India ;4.Department of Electronics and Communication Engineering, M.A.N.I.T, Bhopal, Madhya Pradesh, 462003, India ; |
| Abstract: | Silicon - The channel modulated junctionless gate all around (CM-JL-GAA) MOSFET improves the SCE’s with high graded doping of the channel region. Temperature effects on electrostatic and... |
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