Improvement the Breakdown Voltage and the On-resistance in the LDMOSFET: Double Buried Metal Layers Structure |
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| Authors: | Shokouhi Shoormasti Ali Abbasi Abdollah Orouji Ali A. |
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| Affiliation: | 1.Electrical and Computer Engineering Department, Semnan University, Semnan, Iran
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| Abstract: | Silicon - In this paper, a new method is investigated to improve the breakdown voltage in the lateral power MOSFET transistors. The structure is based on Double Buried Metal Layers in the Lateral... |
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