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Inserting Different Charge Regions in Power MOSFET for Achieving High Performance of the Electrical Parameters |
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| Authors: | Mehrad Mahsa |
| Affiliation: | 1.School of Engineering, Damghan University, Damghan, Iran ; |
| Abstract: | Silicon - In this paper a new lateral double diffused MOSFET is proposed which has better performance compared to the conventional MOSFET. The idea is applied by inserting two silicon windows in... |
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