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Selection of Low Dimensional Material Alternatives to Silicon for Next Generation Tunnel Field Effect Transistors |
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| Authors: | Manocha Pratyush Kandpal Kavindra Goswami Rupam |
| Affiliation: | 1.Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science, Pilani, Rajasthan, India ;2.Department of Electronics and Communication Engineering, Tezpur University, Napaam, Assam, India ;3.Department of Electronics and Communication Engineering, Indian Institute of Information Technology Allahabad, Pragyaraj, Uttar Pradesh, India ; |
| Abstract: | Silicon - This paper presents a method-based investigation on the application of low dimensional materials like graphene, carbon nanotube (CNT), transition metal dichalcogenides (TMDCs) in tunnel... |
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