首页 | 本学科首页   官方微博 | 高级检索  
     


Linear Distortion Analysis of 3D Double Gate Junctionless Transistor with High-K Dielectrics and Gate Metals
Authors:Baidya  Achinta  Lenka  T. R.  Baishya  S.
Affiliation:1.Department of Electronics and Communication Engineering, Mizoram University, Aizawl, 796004, India
;2.Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Assam, 788010, India
;
Abstract:Silicon - The paper presents the investigation of linearity distortion analysis of double gate junctionless transistor with high-k gate dielectrics and gate metals. As double gate junctionless...
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号