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Analytical Modeling of Surrounding Gate Junctionless MOSFET Using Finite Differentiation Method |
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| Authors: | Preethi S Balamurugan N B |
| Affiliation: | 1.Department of ECE, K.L.N College of Information Technology, Sivagangai, Tamil Nadu, India ;2.Department of ECE, Thiagarajar College of Engineering, Madurai, Tamil Nadu, India ; |
| Abstract: | Silicon - In this paper, a novel two-dimensional analytical model for threshold voltage on Dual Material Surrounding Gate Junctionless MOSFET is proposed. The analytical study is aimed at... |
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