Silicide formation during heat treatment of thin Ni-Pt and Ni-Pd solid-solution films and Pt/Ni bilayers on (111)Si

It is shown that isothermal heat treatment of (Ni-Pt)/Si and Pt/Ni/Si heterostructures leads to the formation of oriented Ni-and Pt-based silicide solid solutions. Owing to the three equivalent azimuth orientations in the basic lattice orientation relationship for the Si-Ni_1?x Pt_xSi system, the resulting silicides have a nanocrystalline substructure. The stability of the substructure is due to the optimal interfacial lattice match and near-special grain-boundary misorientations. The silicide phases Ni_1?x Pt_xSi and Pt_1?y Ni_ySi (or Ni_1?x Pd_xSi and Pd_1?y Ni_ySi) may undergo segregation, having the same lattice orientation. In both systems, the segregation is associated with the predominant Ni diffusion. The second component (Pt) is shown to stabilize the orthorhombic Ni-based silicide and to prevent NiSi₂ formation. Photon processing accelerates diffusion and leads to the formation of phase-pure Ni_1?x Pt_xSi solid solutions.