Optimization of 3C–SiC/Si heterointerfaces in epitaxial growth

In this article, we present the basic formalism of the S-correlated theory of misfit induced interface superstructures (MIIS) and nucleation centers for misfit dislocation network (NCMDN). Two main properties play an important role in the theory. The first one is the S factor, which is the ratio of effective elastic constants over the material atomic density: this factor can be identified from the standard equations of the elasticity theory which, in our approach, represents the basic background. This implies a realistic lattice dynamics model which enables to interpret the velocity of longitudinal, transverse and shear vibrational waves in solids. The second property, n_S is a geometric parameter related to the extension of MIIS and to the lattice spacing of misfit dislocation network (MDN). We then apply this theory to several heterosystems and we demonstrate that it can be used to optimize heterointerfaces between host materials characterized by large lattice mismatch.