溅射法制备高取向Pt薄膜的工艺研究

采用射频磁控溅射工艺在SiO2／Si衬底上成功制备了适用于pZT铁电薄膜底电极的180nm厚、沿(111)晶向强烈取向的Pt薄膜。厚约50nm的Ti膜被用作过渡层，以增强Pt薄膜与衬底之间的黏着性。实验表明，在Pt薄膜的制备过程中，较高的衬底温度有利于薄膜晶化，促使Pt薄膜沿(111)晶向择优取向生长。而在薄膜沉积后加入适当的热处理工艺，能有效地提高Pt薄膜的择优取向性，同样可以得到沿(111)晶向强烈取向的Pt薄膜。原子力显微镜分析表明，制得的薄膜结构相对致密，结晶状况良好，晶粒尺寸约为50nm。

Preparation of Strongly (111) Oriented Pt Films by RF Sputtering

Strongly (111) oriented Pt films were prepared on SiO_2/Si substrate as the bottom electrodes of PZT films by RF sputtering.Ti layer of about 50 nm was used as the intermediate layer to enhance the adherence between Pt film and the substrate.Through X-ray diffraction (XRD) analysis,it was found that high substrate temperature during Pt deposition will affect the Pt film's nucleation and growth behavior and enhance the Pt (111) orientation. The annealing treatment after Pt film deposition is effective to increase the grain size and diffraction peak's intensity of Pt (111).According to atomic force microscopy (AFM) observation,the as-deposited Pt film has the dense microstructure,fine crystallization and grain size of about 50 nm.