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电极对PZT铁电薄膜的微观结构和电性能的影响
引用本文:杜文娟,陆维,郑萍,孟中岩. 电极对PZT铁电薄膜的微观结构和电性能的影响[J]. 功能材料与器件学报, 2004, 10(3): 289-293
作者姓名:杜文娟  陆维  郑萍  孟中岩
作者单位:上海大学材料与工程学院,上海,201800
基金项目:国家自然科学基金(NSF50302006),上海市科委科技发展基金OOJC14055
摘    要:采用溶胶—凝胶(sol—gel)工艺分别在Pt/Ti/SiO2/Si和LNO/Si电极上制备Pb(Zr0.53,Ti0.47)O3(PZT)铁电薄膜。研究了不同电极材料对PZT铁电薄膜的微结构及电性能的影响。(100)择优取向的PZT/LNO薄膜的介电性能和铁电性能较(111)/(100)取向的PZT/Pt薄膜略有下降,但在抗疲劳特性和漏电流特性方面都有了很大提高。PZT/LNO薄膜10m次极化反转后剩余极化几乎保持未变,直至10^12次反转后,剩余极化仅下降了17%。

关 键 词:PZT 铁电薄膜 微观结构 电性能 电极 疲劳 锆钛酸铅
文章编号:1007-4252(2004)03-0289-05
修稿时间:2003-11-04

Microstructure and electric properties of PZT thin films prepared on different bottom electrodes
DU Wen-juan,LU Wei,ZHENG Ping,MENG Zhong-yan. Microstructure and electric properties of PZT thin films prepared on different bottom electrodes[J]. Journal of Functional Materials and Devices, 2004, 10(3): 289-293
Authors:DU Wen-juan  LU Wei  ZHENG Ping  MENG Zhong-yan
Abstract:Lead Zirconate titanate Pb(Zr0.53Ti0.47)O3 (PZT) thin films were deposited onto LNO/SiO2/Si and Pt/Ti/SiO2/Si substrates by sol-gel method. The effects of LNO bottom electrode on microstruc-ture and electrical properties of the PZT thin films were discussed. Highly (100) oriented PZT/LNOfilms have lower dielectric constant and polarization compared to the (111)/(100) oriented PZT/Ptfilms. Additionally, the PZT/LNO films are found to have fatigue and leakage current behaviors im-proved significantly. The normalized polarizations of the PZT/LNO films have no obvious change up to1010 switching cycles, decrease only 17%up to 1012 switching cycles.
Keywords:PZT thin films  LNO electrode  electric properties  polarization fatigue  Pt electrode  
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