| 快速热退火在Si中引入缺陷的研究(英文) |
| |
| 引用本文： | 陆昉,陆峰,孙恒慧,邬建根.快速热退火在Si中引入缺陷的研究(英文)[J].固体电子学研究与进展,1989(4). |
| |
| 作者姓名： | 陆昉 陆峰 孙恒慧 邬建根 |
| |
| 作者单位： | 复旦大学物理系
(陆昉，陆峰，孙恒慧)，复旦大学物理系(邬建根) |
| |
| 摘 要： |
|
An Investigation of the Defects in Silicon introduced by Rapid Thermal Annealing |
| |
| Abstract: | The deep-level defects are introduced into n-type silicon by rapid thermal annealing (RTA). The kinds of the defects and thier densities vary with rapid annealing temperature. The minority carrier lifetime is reduced rapidly due to these defects. There are two kinds of the defects: one is related to the metal impurity frozen into the crystal lattice defect: which can be removed by subsequent annealing near 650℃, the other is related to the intrinsic defect of the crystal, which remains after subsequent annealing. Our results show that latter is associated with dislocation. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
|
