| MOS电容的热载流子损伤及其与电离辐射损伤的关系 |
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| 引用本文： | 任迪远,余学峰,艾尔肯,张国强,陆妩,郭旗,范隆,严荣良.MOS电容的热载流子损伤及其与电离辐射损伤的关系[J].固体电子学研究与进展,2001,21(1):103-108. |
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| 作者姓名： | 任迪远 余学峰 艾尔肯 张国强 陆妩 郭旗 范隆 严荣良 |
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| 作者单位： | 中科院新疆物理研究所，乌鲁木齐，830011 |
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| 基金项目： | 本课题受国防科技预研基金资助 |
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| 摘 要： | 通过对国产加固 N型 MOS电容进行衬底热电子高场注入 ( SHE)及 γ总剂量辐照实验 ,特别是进行总剂量辐射损伤后的热载流子损伤叠加实验 ,从微观氧化物电荷、界面态的感生变化及其界面态的能量分布变化等角度研究比较了 MOS结构热载流子损伤特性及与电离辐射损伤的关系。
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| 关 键 词： | 金属-氧化物-半导体结构 热载流子 电离辐射 损伤 氧化物电荷 界面态 |
| 文章编号： | 1000-3819（2001）01-0103-06 |
| 修稿时间： | 1999年5月5日 |
Correlation between the Damages of MOS Capacitor Induced by Substrate Hot-carrier Ejection and Total Dose Irradiation |
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| REN Diyuan.Correlation between the Damages of MOS Capacitor Induced by Substrate Hot-carrier Ejection and Total Dose Irradiation[J].Research & Progress of Solid State Electronics,2001,21(1):103-108. |
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| Authors: | REN Diyuan |
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| Abstract: | N-type MOS capacitors have been experimented with SubstrateHot-carrier Ejection （SHE） and Total Dose Irradiation （TDI） separately， especially with the compound process of SHE after TDI． The characteristics of MOS structures’ damage induced by SHE and its correlation with that induced by TDI have been studied from the view of changes of oxide charges and interface states as wll as the distribution of the interface state with the energy． |
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| Keywords: | MOS structure substrate hot carrier ejection total dose irradiation damge oxide charges interface states |
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