Study on the structural, electrical and optical properties of Al-F co-doped ZnO thin films prepared by RF magnetron sputtering |
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Authors: | Rui-xin Ma |
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Affiliation: | (1) Department of Physics, Sri Venkateswara University, Tirupati, 517 502, India; |
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Abstract: | Al and F co-doped ZnO (ZnO:(Al, F)) thin films on glass substrates are prepared by the RF magnetron sputtering with different
F doping contents. The structural, electrical and optical properties of the deposited films are sensitive to the F doping
content. The X-ray analysis shows that the films are c-axis orientated along the (002) plane with the grain size ranging from
9 nm to 13 nm. Micrographs obtained by the scanning electron microscope (SEM) show a uniform surface. The best films obtained
have a resistivity of 2.16×10−3ù cm, while the high optical transmission is 92.0% at the F content of 2.46 wt.%. |
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Keywords: | |
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