| nLEDMOS热载流子效应在版图及工艺上的改善方法 |
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| 引用本文： | 钱钦松,李海松,孙伟锋,易扬波. nLEDMOS热载流子效应在版图及工艺上的改善方法[J]. 半导体学报, 2009, 30(3): 034004-3 |
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| 作者姓名： | 钱钦松 李海松 孙伟锋 易扬波 |
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| 作者单位： | National;ASIC;System;Engineering;Research;Center;Southeast;University; |
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| 基金项目： | 国家高技术研究发展计划(NO. 2004AA1Z1060) |
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| 摘 要： | Two layout and process key parameters for improving high voltage nLEDMOS （n-type lateral extended drain MOS） transistor hot carrier performance have been identified. Increasing the space between Hv-pwell and n-drift region and reducing the n-drift implant dose can dramatically reduce the device hot carder degradations, for the maximum impact ionization rate near the Bird Beak decreases or its location moves away from the Si/SiO2 interface. This conclusion has been analyzed in detail by using the MEDICI simulator and it is also confirmed by the test results.
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| 关 键 词： | MOS晶体管 热载流子 高压 进程 Si/SiO2 优化 关键参数 漂移区 |
Layout and process hot carrier optimization of HV-nLEDMOS transistor |
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| Qian Qinsong,Li Haisong,Sun Weifeng and Yi Yangbo. Layout and process hot carrier optimization of HV-nLEDMOS transistor[J]. Chinese Journal of Semiconductors, 2009, 30(3): 034004-3 |
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| Authors: | Qian Qinsong Li Haisong Sun Weifeng Yi Yangbo |
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| Affiliation: | National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China;National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China;National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China;National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China |
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| Abstract: | Two layout and process key parameters for improving high voltage nLEDMOS (n-type lateral extended drain MOS) transistor hot carrier performance have been identified. Increasing the space between Hv-pwell and n-drift region and reducing the n-drift implant dose can dramatically reduce the device hot carrier degradations, for the maximum impact ionization rate near the Bird Beak decreases or its location moves away from the Si/SiO2 interface. This conclusion has been analyzed in detail by using the MEDICI simulator and it is also confirmed by the test results. |
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| Keywords: | nLEDMOS hot carrier degradation layout process |
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