V-groove power junction field-effect transistor for v.h.f. applications |
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| Authors: | Mok T.D. Salama C.A.T. |
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| Affiliation: | University of Toronto, Department of Electrical Engineering, Toronto, Canada; |
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| Abstract: | A new high-power, high-frequency junction field-effect transistor with a nonplanar V-shaped channel fabricated by preferential etching of ?100? silicon is described. The structure of this transistor is very simple, requires only three photolithographic masking steps and results in a very high packing density. A device having an effective channel length of 2 ?m was fabricated. This transistor exhibits a low-frequency transconductance of 9.6 mS/mm, a cutoff frequency of 0.9 GHz and an output power density of 25 W/mm2 of chip area. |
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