Role of Oxygen in Microstructure Development at Solid-State Diffusion-Bonded Cu/α-Al2O3 Interfaces |
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Authors: | Kirk A Rogers Kevin P Trumble Brian J Dalgleish Ivar E Reimanis |
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Affiliation: | School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907;Center for Advanced Materials, Lawrence Berkeley Laboratory, Berkeley, California 94720;Center for Materials Science, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 |
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Abstract: | Microstructure development at solid-state diffusion-bonded Cu/α-Al2O3 interfaces has been studied using optical and electron microscopy. High-purity Cu foil was bonded between basal-oriented α-Al2O3 single-crystal plates at 1040°C for 24 h in a vacuum of ~1.3 × 10?4 Pa (1 × 10?6 torr). Optical microscopy of as-bonded specimens revealed a large Cu grain size, fine pores, and long needles of Cu2O at the interface. Bulk specimens were annealed at 1000°C for various times under controlled oxygen partial pressures in CO/CO2 mixtures. Consistent with a thermochemical analysis, CuAlO2 could be formed at the interfaces. The CuAlO2 was acicular and discontinuous, but occurred in a uniform distribution over the bulk specimen interfaces. |
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