| GaN基紫外光探测器的研究进展 |
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| 引用本文： | 刘云燕,袁玉珍. GaN基紫外光探测器的研究进展[J]. 半导体技术, 2005, 30(2): 25-29 |
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| 作者姓名： | 刘云燕 袁玉珍 |
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| 作者单位： | 山东理工大学物理系,山东,淄博,255049;山东理工大学物理系,山东,淄博,255049 |
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| 摘 要： | 相对于其他类型的探测器,GaN基紫外光探测器具有很多优点.本文主要介绍了近几年GaN基紫外光探测器的发展,并对各种结构形式进行了比较.
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| 关 键 词： | G a N 紫外探测器 光电导 光伏 M S M |
| 文章编号： | 1003-353X(2004)02-0025-05 |
| 修稿时间： | 2004-11-23 |
Research Progress in GaN-Based Semiconductor UV Detectors |
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| LIU Yun-yan,YUAN Yu-zhen. Research Progress in GaN-Based Semiconductor UV Detectors[J]. Semiconductor Technology, 2005, 30(2): 25-29 |
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| Authors: | LIU Yun-yan YUAN Yu-zhen |
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| Abstract: | Contrasting to other kinds of ultraviolet detector, GaN based ultraviolet detector has many advantages.This article aims to give a detailed introduction of photoconductive , photovoltage, MSM structure and other types of ultraviolet GaN detector.We also compared the characteristics of the various photodetector structures developed to date. |
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| Keywords: | GaN UV detector photoconductive photovoltage MSM |
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