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CdS/TiO2纳米棒阵列复合材料的制备及其光电化学特性
引用本文:张亚南,付乌有,李伊荇,杨海滨. CdS/TiO2纳米棒阵列复合材料的制备及其光电化学特性[J]. 复合材料学报, 2013, 30(2): 99-104
作者姓名:张亚南  付乌有  李伊荇  杨海滨
作者单位:1. 吉林大学 化学学院, 长春 130012;2. 吉林大学 超硬材料国家重点实验室, 长春 130012
基金项目:国家自然科学基金(51272086);吉林省科技厅重点项目(201036000Z040360)
摘    要:以水热法在氟掺杂的氧化锡透明导电玻璃(FTO)上制备的TiO2纳米棒阵列为衬底, 通过连续化学水浴沉积(S-CBD)法将CdS量子点 (QDs)沉积在TiO2纳米棒上, 形成CdS/TiO2阵列复合材料。分别利用高分辨透射电子显微镜(HRTEM)、 场发射扫描电子显微镜(FESEM)、 X射线衍射(XRD)和紫外可见光谱(UV-vis)等对样品的形貌、 晶型以及光吸收性能进行了表征。结果表明, TiO2纳米棒阵列长度约为2.9 μm, CdS QDs的尺寸大约在5~9 nm。随着沉积层数的增加, CdS QDs的厚度增加, 同时伴随着光吸收边的红移。通过电流-电压特性曲线对其光电流-电压特性进行了分析, 发现光电流和光电转换效率均呈现出先增大后减小的规律。100 mW/cm2的光照下, 在S-CBD为7层时, 光电流和开路电压最大值分别达到2.49 mA·cm-2和1.10 V, 而电池的效率达到最大值1.91%。

关 键 词:硫化镉  二氧化钛  量子点  纳米阵列  复合材料  光电特性  
收稿时间:2012-02-09

Preparation and photoelectric characteristics of CdS/TiO2 compound nanoarray
ZHANG Yanan,FU Wuyou,LI Yixing,YANG Haibin. Preparation and photoelectric characteristics of CdS/TiO2 compound nanoarray[J]. Acta Materiae Compositae Sinica, 2013, 30(2): 99-104
Authors:ZHANG Yanan  FU Wuyou  LI Yixing  YANG Haibin
Affiliation:1. College of Chemistry, Jilin University, Changchun 130012, China;2. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
Abstract:TiO2 nanorod arrays film was prepared on FTO by a simple hydrothermal synthesizing method. The formation of CdS quantum dots (QDs) sensitized TiO2 nanorods was carried out by sequential chemical bath deposition (S-CBD) technique. The morphologies, phase structure, and optical absorption properties of the as-prepared materials were characterized by field emission scanning electron microscope (FESEM), X-ray diffraction (XRD) and UV-vis spectrometer. The results indicate that the length of TiO2 nanorods array is up to 2.9 μm and the diameters of CdS quantum dots range from 5 nm to 9 nm. With the increase of the sedimentary layers, the thickness of the CdS QDs increases, accompanied by the red shift of the absorption edge. By analyzing the photocurrent-voltage characteristics from I-V curve, it can be found that the photocurrent and photoelectric conversion efficiency both increase first and then decrease. A photocurrent of 2.49 mA·cm-2, an open circuit photovoltage of 1.10 V, and a conversion efficiency of 1.91% are obtained under an illumination of 100 mW/cm2, when the CdS QDs deposites on TiO2 nanorod arrays film for about 7 cycles.
Keywords:CdS  TiO2  quantum dots  nanoarray  compound materials  photoelectric characteristics  
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