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Preparation and characterization of tantalum-doped indium tin oxide films deposited by magnetron sputtering
Affiliation:1. Key Laboratory of the Ministry of Education for High Temperature Materials and Testing, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;2. College of Science, Donghua University, Shanghai 200051, China;1. The Australian Energy Research Institute and the School of Electrical Engineering and Telecommunications, The University of New South Wales (UNSW Australia), Sydney 2052, NSW, Australia;2. Electrical Engineering Department, South Tehran Branch, Islamic Azad University, Tehran, Iran;1. Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;2. Shanghai Solar Energy Technology Co., Ltd., Shanghai 200241, China;1. Department of Physics, Xiamen University, Xiamen 361005, China;2. School of Energy Research, Xiamen University, Xiamen 361005, China;1. Advanced Materials Laboratory, Department of Physics, Periyar University, Salem 636 011, Tamil Nadu, India;2. Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Kancheepuram 603203, Tamil Nadu, India
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