| Abstract: | A two-dimensional lossy shunt TLM node is incorporated into a TLM system and adapted to model for the first time the Maxwell field equations in thin semiconductor samples. Both the characteristics of the node and the TLM system itself are fully described. By considering a parallel-plate structure containing a thin GaAs sample, driven by a voltage source, it is shown, with an example, that this TLM technique can simulate the response of non-stationary electromagnetic fields in a semiconductor to applied excitations. |
