Analysis of conduction in fully depleted SOI MOSFETs |
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Authors: | Young K.K. |
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Affiliation: | MIT Lincoln Lab., Lexington, MA; |
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Abstract: | The conduction characteristics of fully depleted SOI MOSFETs studied by theoretical analysis and computer simulation are discussed. In these devices the ideal inverse subthreshold slope of 59.6 mV/decade is obtained if the interface-state capacitances are much smaller than the gate-oxide and silicon-film capacitances. For above-threshold conduction, with decreasing silicon film thickness the inversion charges penetrate more deeply into the film and the transconductance increases because of the decreasing fraction of surface conduction |
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