| 二氧化硅干法蚀刻参数的优化研究 |
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| 引用本文： | 敬小成,姚若河,吴纬国. 二氧化硅干法蚀刻参数的优化研究[J]. 半导体技术, 2005, 30(6): 37-40,44 |
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| 作者姓名： | 敬小成 姚若河 吴纬国 |
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| 作者单位： | 华南理工大学应用物理系,广州,510641;南科集团,广东,珠海,519020 |
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| 摘 要： | 阐述了二氧化硅干法蚀刻的原理和主要的蚀刻参数.应用正交实验,进行了蚀刻速率、均匀性、选择比等主要蚀刻参数的优化,得出主要工艺参数的设置方法和理想条件漂移时的调整方法以及优化选择比的蚀刻方案.
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| 关 键 词： | 干法蚀刻 二氧化硅 工艺参数 蚀刻参数 |
| 文章编号： | 1003-353X(2005)06-0037-04 |
Research on Optimizing Etching Parameters of the Dry Etching for Silicon Dioxide |
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| JING Xiao-cheng,YAO Ruo-he,WU Wei-guo. Research on Optimizing Etching Parameters of the Dry Etching for Silicon Dioxide[J]. Semiconductor Technology, 2005, 30(6): 37-40,44 |
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| Authors: | JING Xiao-cheng YAO Ruo-he WU Wei-guo |
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| Abstract: | The principle and the main parameters of the dry etching for silicon dioxide are introduced. The optimizing methods of main etching parameters, such as etching rate, uniformity and selectivity, were investigated by the orthogonal experiment, and these results can be used for setting main process parameters, adjusting them with a drifting from desired conditions, and optimizing etchings electivity. |
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| Keywords: | dry etching silicon dioxide process parameter etching parameter |
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