An advanced laser application for controlling of electric resistivity of thick film resistors

When electric resistivity of Thick Film Resistor (TFR) is adjusted to the desired value, laser beam is irradiated onto the resistor material so that a part of the resistor material is instantaneously vaporized and cut away. This conventional laser trimming method to adjust the resistivity of TFRs is an indispensable technique for manufacturing elec-tronic devices such as hybrid ICs. A peculiar phenomena was revealed by us, that is, when specially selected pulse laser beams were irradiated to TFR, the TFR was surface modified without cutting grooves, and then resistivity of the TFR was decreased. We completed the advanced laser process to apply this peculiar phenomena. 8 By comparing with conventional trimming processes, we can show prominent features of the advanced process, for example, resistivity of fine size TFR (300 micrometers-width and under) can be easily controlled. The decrease in resistivity of the TFR is considered to result from the decrease in specific resistivity of glass in the TFR. Because it is considered that the glass in the TFR is heavily doped with ruthenium impurities during the surface modification due to results of morphology observations and x-ray diffraction analysis. We have applied this advanced laser process to fine size TFR (300 micrometers-width), and developed high density hybrid ICs.