| GaAs基HEMT嵌入式微加速度传感器力电耦合系数研究 |
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| 引用本文： | 田学东,薛晨阳,王永存,刘俊,唐军.GaAs基HEMT嵌入式微加速度传感器力电耦合系数研究[J].传感器与微系统,2013,32(2):63-65,69. |
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| 作者姓名： | 田学东 薛晨阳 王永存 刘俊 唐军 |
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| 作者单位： | 中北大学仪器科学与动态测试教育部重点实验室电子测试技术国防科技重点实验室,山西太原,030051 |
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| 基金项目： | 中国博士后科学基金资助项目(2011M50054);国家自然科学基金面上项目(61171056);国家自然科学基金重点资助项目(50730009) |
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| 摘 要： | 设计加工了一种GaAs基高电子迁移率晶体管(HEMT)嵌入式微加速度传感器结构,通过软件仿真和实验测试相结合的方法,研究了所设计的微结构在平行于HEMT生长方向上(Z方向)不同加速度作用下敏感单元HEMT的力电耦合特性。实验结果表明:GaAs基HEMT微加速度传感器在其低量程范围内(0～15gn)敏感单元HEMT的力电耦合系数较稳定,且其力电耦合系数为10-8数量级,比常规Si压阻式加速度传感器的力电耦合系数10-10高出2个数量级。
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| 关 键 词： | 高电子迁移率晶体管 砷化镓 力电耦合系数 传感器 |
Study on electro-mechanical coupling coefficient of GaAs-based HEMT-embedded micro-acceleration transducer |
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| TIAN Xue-dong
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XUE Chen-yang
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WANG Yong-cun
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LIU Jun
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TANG Jun.Study on electro-mechanical coupling coefficient of GaAs-based HEMT-embedded micro-acceleration transducer[J].Transducer and Microsystem Technology,2013,32(2):63-65,69. |
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| Authors: | TIAN Xue-dong XUE Chen-yang WANG Yong-cun LIU Jun TANG Jun |
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| Affiliation: | (Key Laboratory of Instrumentation Science & Dynamic Measurement,Ministry of Education, National Key Laboratory for Electronic Measurement Technology,North University of China,Taiyuan 030051,China) |
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| Abstract: | A kind of high electron mobility transistor(HEMT) embedded micro-acceleration transducer structure GaAs-based is designed and manufactured.By simulation and experiments,electro-mechanical characteristics of HEMT sensitive unit is studied under action of different acceleration parallel to the HEMT growth direction(Z direction).The experimental results show that the sensitive unit HEMT electro-mechanical coupling coefficient is stable in the low range(0~15 gn) of GaAs-based HEMT micro-acceleration transducer,which is 10-8and two orders higher than electro-mechanical coupling coefficient 10-10 of conventional Si piezoresistive acceleration transducer. |
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| Keywords: | HEMT GaAs electro-mechanical coupling coefficient transducer |
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