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| 低压化学汽相淀积含氢氮化硼薄膜 | |
| 引用本文： | 王玉玲,陈梦真,江红.低压化学汽相淀积含氢氮化硼薄膜[J].半导体学报,1989,10(5):390-394. |
| 作者姓名： | 王玉玲 陈梦真 江红 |
| 作者单位： | 中国科学院微电子中心 北京 (王玉玲，陈梦真)，中国科学院微电子中心 北京(江红) |
| 摘 要： | 本实验采用二硼烷(B_1H_6)和氨气(NH_(?)),在388～700℃下进行低压化学汽相淀积生成含有硼、氮、氢的膜(B_(1～3)NH),用于X光曝光掩模的基底.已测得膜的各种特性如淀积速率、电阻率、元素成份比、晶型、折射率、红外吸收光谱、应力变化、对光的透射率、化学不活泼性及等离子腐蚀速率等. |
| 关 键 词： | 化学汽相淀积 氢氮化硼 薄膜技术 |
Low Pressure Chemical Vapor Deposition of Boro-Hydro-Nitride Films |
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| Wang Yuling/Microelectronics Research & Development Center,Acadcmia Sinica,Beijing Chen Mengzhen/Microelectronics Research & Development Center,Acadcmia Sinica,Beijing Jiang Hong/Microelectronics Research & Development Center,Acadcmia Sinica,Beijing.Low Pressure Chemical Vapor Deposition of Boro-Hydro-Nitride Films[J].Chinese Journal of Semiconductors,1989,10(5):390-394. | |
| Authors: | Wang Yuling/Microelectronics Research & Development Center Acadcmia Sinica Beijing Chen Mengzhen/Microelectronics Research & Development Center Acadcmia Sinica Beijing Jiang Hong/Microelectronics Research & Development Center Acadcmia Sinica Beijing |
| Abstract: | |
| Keywords: | LPCVD Film containing boron Nitrogen and hydrogen X-ray Lithography Mask |
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