加热去氩处理工艺对离子束混合沉积的C-SiC涂层阻氢性能的影响

利用Ar＋离子束混合技术在不锈钢基体上沉积C-SiC涂层，然后对部分样品进行加热去氩处理（400℃，30min），再用5keV氢离子源辐照样品。通过扫描电镜（SEM）的表面形貌观察、二次离子质谱仪（SIMS）的H与Ar元素深度分布和正离子质谱分析，研究去氩处理对氢离子辐照的C-SiC涂层的形貌和阻氢性能的影响。结果表明，经去氩处理，样品中不锈钢基体内的氢浓度降低了80%，显示出去氩处理的C-SiC涂层具有更高的阻氢性能。研究结果将为该技术应用于不锈钢基体上C-SiC涂层制备工艺的进一步改善提供依据。

Effect of Eliminating Argon by Heat-Treatment on Hydrogen Resistance of C-SiC Films Deposited by Ion Beam Mixing

C-SiC films were deposited on the surface of stainless steel using ion beam mixing. In order to eliminate argon, some of the samples were heat-treated for 30 min at 400 ℃ before all were irradiated by 5 keV hydrogen ion beam. Scanning electron microscope (SEM) was used to analyze surface microtopology. Secondary ion mass spectrometry (SIMS) was used to analyze the depth distribution of H and Ar and mass spectra of positive species. The effect of eliminating argon by heat-treatment on the surface structure and hydrogen resistance of C-SiC films was studied. It is found that the concentration of hydrogen in stainless steel substrates after eliminated argon by heat-treatment is reduced 80%. This means that the technical of eliminating argon by heat-treatment can effectively improve hydrogen resistance of C-SiC films, which offers the theory proof of technical improvement in practical application.