| 双扩散型MOSFET栅电阻测试实现与应用 |
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| 引用本文： | 周金峰,王明湘.双扩散型MOSFET栅电阻测试实现与应用[J].江苏电器,2007(Z1). |
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| 作者姓名： | 周金峰 王明湘 |
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| 作者单位： | 苏州大学电子信息学院 江苏苏州215021 |
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| 摘 要： | 功率MOSFET的开关性能主要取决于栅极和源极间的等效电阻Rg和等效电容Ggs的乘积.讲述了双扩散型MOSFET栅电阻Rg和栅电容Cgs的等效模型和构成,介绍了金属绝缘半导体结构C-V曲线及栅电阻Rg的测试方法和设备.通过选用不同的直流偏置电压、频率、信号幅值等进行测试,确定了比较合适的栅电阻Rg测试方法.栅电阻Rg测试还可以用于生产中的不良分析.
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| 关 键 词： | 栅电阻 栅电容 双扩散型MOSFET 金属绝缘半导体结构C-V曲线 扩散型 MOSFET 电阻测试 应用 Resistance Gate Testing Application 分析 生产 比较 信号 频率 直流偏置电压 设备 测试方法 曲线 导体结构 绝缘 金属 |
Implementation and Application of Testing on Gate Resistance of Double-diffused MOSFET |
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| Authors: | ZHOU Jin-feng WANG Ming-xiang |
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| Abstract: | The switching performance of power MOSFET mainly depends on the product of equivalent resistance Rg and capacitance Cgs between Gate and Source. The paper presents the equivalent model and components of gate resistance Rg and gate capacitance Cgs of DMOSFET, the C-V curve of metal insulator semiconductor structure and testing methods and equipments of gate resistance Rg. Through experiments with different DC bias, frequency and AC signal input, an optimum testing method of gate resistance Rg is developed. The testing on gate resistance Rg can be applied to analyze device defects. |
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| Keywords: | gate resistance gate capacitance double-diffused MOSFET C-V curve of metal insulator semiconductor structure |
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