Improving the non-quasi-static weak-to-strong-inversion four-terminal MOSFET model |
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Abstract: | The recently proposed non-quasi-static dc-to-high-frequency weak-to-strong-inversion model for the four-terminal MOSFET is improved in such a way that closer agreement with exact and experimental results can be obtained. It is shown that the modification of a single parameter leads to significant improvement in the model characteristics. |
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