Phase Relationships and Physical Properties of Homologous Compounds in the Zinc Oxide-Indium Oxide System |
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| Authors: | Toshihiro Moriga Doreen D. Edwards Thomas O. Mason George B. Palmer Kenneth R. Poeppelmeier Jon L. Schindler Carl R. Kannewurf Ichiro Nakabayashi |
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| Affiliation: | Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208-3108;Department of Chemistry and Materials Research Center, Northwestern University, Evanston, Illinois 60208-3113;Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208-3118;Department of Chemical Science and Technology, Faculty of Engineering, Tokushima University, Tokushima 770, Japan |
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| Abstract: | Equilibrium phase relationships in the ZnO-In2O3 system were determined between 1100° and 1400°C using solid-state reaction techniques and X-ray diffractometry. In addition to ZnO and In2O3, nine homologous compounds, Zn k In2O k +3 (where k = 3, 4, 5, 6, 7, 9, 11, 13, and 15), were observed. Electrical conductivity and diffuse reflectance of the k = 3, 4, 5, 7 and 11 members were measured before and after annealing at 400°C for 1 h under forming gas (4%2-96% N2). Room-temperature conductivity increased as k decreased, because of increased carrier concentration as well as increased mobility. In general, transparency in the wavelength range of 450-900 nm increased as k increased. Reduction in forming gas resulted in increased conductivity and reduced transparency for all compounds measured. The highest room-temperature conductivity measured, 270 S/cm, was that of reduced Zn3In2O6. |
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